| Presentation | 2004/10/15 Influences of AlN buffer layer on AlGaN/GaN HEMTs on 4 inch Si substrates Shinichi MATSUI, Kotaro YAMAMOTO, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMT structures were grown on 4 inch Si substrates by MOCVD method. We investigated the influences of AlN buffer layer thickness. The crystal quality and mobility were slightly improved when AlN buffer layer thickness was increased. However, when AlN buffer layer thickness was more than 200 nm, the mobility decreased due to cracks. We also investigated the influences of the number of pairs in GaN/AlN multilayers. The crystal quality improved and the mobility increased, with increasing the number of pairs in the multilayers. The sample which has 70-pair multilayers showed mobility of 1524.1 and 10958.3 cm^2/Vs at 300 and 77K, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4-inch / Si substrate / GaN / AlGaN/GaN / MOCVD / HEMT |
| Paper # | ED2004-139,CPM2004-113,LQE2004-77 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influences of AlN buffer layer on AlGaN/GaN HEMTs on 4 inch Si substrates |
| Sub Title (in English) | |
| Keyword(1) | 4-inch |
| Keyword(2) | Si substrate |
| Keyword(3) | GaN |
| Keyword(4) | AlGaN/GaN |
| Keyword(5) | MOCVD |
| Keyword(6) | HEMT |
| 1st Author's Name | Shinichi MATSUI |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Kotaro YAMAMOTO |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Hiroyasu ISHIKAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 4th Author's Name | Takashi EGAWA |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2004/10/15 |
| Paper # | ED2004-139,CPM2004-113,LQE2004-77 |
| Volume (vol) | vol.104 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |