Presentation	2004/10/14 Microwave Performance of Diamond MESFET Makoto KASU, Yoshiharu YAMAUCHI, Michal KUBOVIC, Erhard KOHN, Toshiki MAKIMOTO,
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Abstract(in English)	Diamond p-type FET with a gate length of 0.2 μm was fabricated using high-quality CVD thin layer. Its RF cut-off frequency (f_T= 25 GHz, f_= 63 GHz, and f_= 81 GHz) showed the first RF power operation in the millimeter-wave range. The RF power measurements in diamond exhibited P_ of 0.35 mW/mm and the linear power gain of 14 dB at 1 GHz in the A-class operation. The first RF noise measurement showed the minimum noise figure (F_) of 0.72 dB at 3 GHz. In addition, possibility of drift-velocity overshoot is investigated by Monte-Carlo simulations.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Diamond / FET / Cut-off frequency / Microwave / RF output power level / RF noise figure
Paper #	ED2004-134,CPM2004-108,LQE2004-72
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Committee	CPM
Conference Date	2004/10/14(1days)
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Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Microwave Performance of Diamond MESFET
Sub Title (in English)
Keyword(1)	Diamond
Keyword(2)	FET
Keyword(3)	Cut-off frequency
Keyword(4)	Microwave
Keyword(5)	RF output power level
Keyword(6)	RF noise figure
1st Author's Name	Makoto KASU
1st Author's Affiliation	NTT Basic Research Laboratories, NTT Corporation()
2nd Author's Name	Yoshiharu YAMAUCHI
2nd Author's Affiliation	NTT Basic Research Laboratories, NTT Corporation
3rd Author's Name	Michal KUBOVIC
3rd Author's Affiliation	Department of Electronic Devices and Circuits, University of Ulm
4th Author's Name	Erhard KOHN
4th Author's Affiliation	Department of Electronic Devices and Circuits, University of Ulm
5th Author's Name	Toshiki MAKIMOTO
5th Author's Affiliation	NTT Basic Research Laboratories, NTT Corporation
Date	2004/10/14
Paper #	ED2004-134,CPM2004-108,LQE2004-72
Volume (vol)	vol.104
Number (no)	359
Page	pp.pp.-
#Pages	6
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