| Presentation | 2004/10/14 Al-Free n-Type Ohmic Contact for AlGaN/GaN Power HEMTs Toshihiro OHKI, Masahito KANAMURA, Tsuyoshi TAKAHASHI, Toshihide KIKKAWA, Kazukiyo JOSHIN, Naoki HARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have demonstrated an Al-free Ti/Mo/Ta/Au-based n-type ohmic contact for high power AlGaN/GaN high electron mobility transistors (HEMTs). Our fabricated ohmic contact has an extremely smooth surface morphology and almost the same specific contact resistance (p_c) of 9.1 × 10^<-6> Ωcm^2 as conventional Ti/Al-based contacts. We have found that Mo, which is generally inserted as a barrier layer, has the effect of reducing contact resistance. Moreover, we have applied this ohmic technique to fabricate an AlGaN/GaN HEMT and obtained sufficient transconductance (g_m) of 210 mS/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / HEMT / FET / ohmic |
| Paper # | ED2004-132,CPM2004-106,LQE2004-70 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al-Free n-Type Ohmic Contact for AlGaN/GaN Power HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | HEMT |
| Keyword(4) | FET |
| Keyword(5) | ohmic |
| 1st Author's Name | Toshihiro OHKI |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Masahito KANAMURA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Tsuyoshi TAKAHASHI |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Toshihide KIKKAWA |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Kazukiyo JOSHIN |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoki HARA |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2004/10/14 |
| Paper # | ED2004-132,CPM2004-106,LQE2004-70 |
| Volume (vol) | vol.104 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |