Presentation 2004/10/14
Cubic-InN films on GaAs substrates grown by ECR-plasma assisted MBE
Tokuo YODO, Takahiro YAMAMOTO, Tomoyuki TAKAYAMA,
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Abstract(in English) The research on cubic-InN, quasi-stable phase of InN, has been just started, so that their fundamental material properties have not been clarified yet. However, it is easily imagined that less carriers scatter in cubic-InN since cubic-InN has symmetry on crystal and band structure higher than hexagonal-InN. Therefore, realization of high-mobility electron device will be expected in the future. We grew cubic-InN films on GaAs(001) substrates and investigated the influences of effective V/III ratio during growth. However, many unclear points (for example, mixture of hexagonal-InN grains or/and problem of quality) were still left in growth process of cubic-InN. It is urgently important to investigate growth process of cubie-InN and clarify the optimum growth conditions.
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Keyword(in English) Cubic-InN / hexagonal-InN / ECR plasma assist MBE / GaAs(001)substratum
Paper # ED2004-130,CPM2004-104,LQE2004-68
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Committee CPM
Conference Date 2004/10/14(1days)
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Language JPN
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Title (in English) Cubic-InN films on GaAs substrates grown by ECR-plasma assisted MBE
Sub Title (in English)
Keyword(1) Cubic-InN
Keyword(2) hexagonal-InN
Keyword(3) ECR plasma assist MBE
Keyword(4) GaAs(001)substratum
1st Author's Name Tokuo YODO
1st Author's Affiliation Electronics, Information and Communication Engineering, Osaka Institute of Technology()
2nd Author's Name Takahiro YAMAMOTO
2nd Author's Affiliation Electronics, Information and Communication Engineering, Osaka Institute of Technology
3rd Author's Name Tomoyuki TAKAYAMA
3rd Author's Affiliation Electronics, Information and Communication Engineering, Osaka Institute of Technology
Date 2004/10/14
Paper # ED2004-130,CPM2004-104,LQE2004-68
Volume (vol) vol.104
Number (no) 359
Page pp.pp.-
#Pages 6
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