| Presentation | 2004/10/14 InN films on Sapphire(0001) substrate grown by ECR-plasma assisted MBE Tokuo YODO, Kiyonaga TAMOTO, Teruya SHIMADA, Hiroyuki NIGUCHI, Youhei FUJII, Takefumi MAOKA, Yoshiyuki HARADA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Hexagonal InN has been recently given much attention as a material for high-speed electron device because of the smallest effective electron mass, highest electron mobility and drift velocity of III-nitride semiconductors. Although the band-gap energy has been long believed to be 1.9 eV, it has been recently reported by many researchers that it was below 0.8 eV, accompanied by drastic improvement of growth techniques and reconsidered as a material of near-far infrared light emitting devices (LEDs). We have grown InN films on Si(111) substrates for developing low-cost full-color LED. However, it was difficult to estimate both band-gap energy and carrier concentration because of conductive Si substrate. In this technical report, we have grown InN films on insulating sapphire(0001) substrates and estimated the film characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hexagonal InN / ECR-plasma assisted MBE / Sapphire(0001) substrate / In-polar plane |
| Paper # | ED2004-128,CPM2004-102,LQE2004-66 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InN films on Sapphire(0001) substrate grown by ECR-plasma assisted MBE |
| Sub Title (in English) | |
| Keyword(1) | Hexagonal InN |
| Keyword(2) | ECR-plasma assisted MBE |
| Keyword(3) | Sapphire(0001) substrate |
| Keyword(4) | In-polar plane |
| 1st Author's Name | Tokuo YODO |
| 1st Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology() |
| 2nd Author's Name | Kiyonaga TAMOTO |
| 2nd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 3rd Author's Name | Teruya SHIMADA |
| 3rd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 4th Author's Name | Hiroyuki NIGUCHI |
| 4th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 5th Author's Name | Youhei FUJII |
| 5th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 6th Author's Name | Takefumi MAOKA |
| 6th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 7th Author's Name | Yoshiyuki HARADA |
| 7th Author's Affiliation | Applied Physics, Osaka Institute of Technology |
| Date | 2004/10/14 |
| Paper # | ED2004-128,CPM2004-102,LQE2004-66 |
| Volume (vol) | vol.104 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |