Presentation 2004/10/14
Study on InGaN ultra-thin films by high-resolution Rutherford backscattering spectrometry
Satoshi KURAI, Hiroaki SAKUTA, Yoshitomo YAMANAKA, Tsunemasa TAGUCHI,
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Abstract(in English) Thermal diffusion of In atoms in InGaN ultra-thin films of the thickness of 3 nm, which were grown by RF-MBE, was directly observed by the high-resolution Rutherford backscattering spectrometry. As the result, InGaN ultra-thin films decomposed by post-growth thermal annealing at 875℃ for lOmin, but remained by covering with GaN capping layers. However the decomposition of InGaN was suppressed by the capping layer, the thickness of InGaN with post-growth thermal annealing increased comparing with that before annealing; On the contrary, the thickness of the cap-GaN layer decreased. This result indicates that diffusion of In atoms occurred at GaN/InGaN interface. The diffusion coefficient was estimated to be approximately 3.8 × 10^<18> cm^2/s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) high-resolution Rutherford backscattering spectrometry / RF-MBE / InGaN / thermal diffusion / diffusion coefficient
Paper # ED2004-126,CPM2004-100,LQE2004-64
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Committee CPM
Conference Date 2004/10/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on InGaN ultra-thin films by high-resolution Rutherford backscattering spectrometry
Sub Title (in English)
Keyword(1) high-resolution Rutherford backscattering spectrometry
Keyword(2) RF-MBE
Keyword(3) InGaN
Keyword(4) thermal diffusion
Keyword(5) diffusion coefficient
1st Author's Name Satoshi KURAI
1st Author's Affiliation Faculty of Engineering, Yamaguchi University()
2nd Author's Name Hiroaki SAKUTA
2nd Author's Affiliation Faculty of Engineering, Yamaguchi University
3rd Author's Name Yoshitomo YAMANAKA
3rd Author's Affiliation Faculty of Engineering, Yamaguchi University
4th Author's Name Tsunemasa TAGUCHI
4th Author's Affiliation Faculty of Engineering, Yamaguchi University
Date 2004/10/14
Paper # ED2004-126,CPM2004-100,LQE2004-64
Volume (vol) vol.104
Number (no) 359
Page pp.pp.-
#Pages 4
Date of Issue