Presentation 2004/10/14
Mg-doping influence in AlGaN with high Al mole fraction
Takashi Ohnishi, Akira Ishiga, Yuhuai Liu, Tomohiko Shibata, Mitsuhiro Tanaka, Hideto Miyake, Kazumasa Hiramatsu,
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Abstract(in English) p-type conductivity control of AlGaN needs Mg-doping, but it is difficult to fabricate low resistance p-type AlGaN because the higher Al mole fraction in AlGaN is, the larger Mg activation energy becomes. Therefore, Mg-doping influence of AlGaN with high Al mole fraction is not well understood. In this study, epitaxial AlN film was used as the substrate for the growth of Mg-doped AlGaN by low-pressure MOVPE. Crystallinity, optical property and other property were characterized. XRC-FWHM values of this experimental AlGaN increased with the flow of Cp_2Mg. And the emission peak concerned with deep level by Mg-doping was observed in CL spectra.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN / GaN / AlN / LP-MOVPE / Mg
Paper # ED2004-124,CPM2004-98,LQE2004-62
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Committee CPM
Conference Date 2004/10/14(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Mg-doping influence in AlGaN with high Al mole fraction
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) GaN
Keyword(3) AlN
Keyword(4) LP-MOVPE
Keyword(5) Mg
1st Author's Name Takashi Ohnishi
1st Author's Affiliation Faculty of Eng., Mie University()
2nd Author's Name Akira Ishiga
2nd Author's Affiliation Faculty of Eng., Mie University
3rd Author's Name Yuhuai Liu
3rd Author's Affiliation Satellite Venture Business Lab., Mie University
4th Author's Name Tomohiko Shibata
4th Author's Affiliation NGK Insulators, Ltd.
5th Author's Name Mitsuhiro Tanaka
5th Author's Affiliation NGK Insulators, Ltd.
6th Author's Name Hideto Miyake
6th Author's Affiliation Faculty of Eng., Mie University
7th Author's Name Kazumasa Hiramatsu
7th Author's Affiliation Faculty of Eng., Mie University
Date 2004/10/14
Paper # ED2004-124,CPM2004-98,LQE2004-62
Volume (vol) vol.104
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue