Presentation | 2004/10/14 The Effect of Growth Pressure on material properties of p-type GaN Akinori Ubukata, Hiroki Tokunaga, Yoshiki Yano, Nakao Akutsu, Koh Matsumoto, Toshiaki Yamazaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigated the effect of growth pressure on material properties of Mg-doped GaN. We found that the hole carrier concentration of p-type GaN grown at 300 Torr was more than one order of magnitude lower than that of p-type GaN grown at atmospheric pressure. In cross-sectional TEM observation, pyramidal defects were observed periodically. These defects were supposed to be inversion domains boundary defects. In this area, strong donor-acceptor emission peaks were observed in CL spectra. It indicates that the donor-like point defects were also generated, associated with IDB. These results may correspond to the electrical properties of p-GaN grown with different growth pressure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Mg doping / point defect / inversion domain / MOVPE / atmospheric pressure growth |
Paper # | ED2004-122,CPM2004-96,LQE2004-60 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2004/10/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | The Effect of Growth Pressure on material properties of p-type GaN |
Sub Title (in English) | |
Keyword(1) | Mg doping |
Keyword(2) | point defect |
Keyword(3) | inversion domain |
Keyword(4) | MOVPE |
Keyword(5) | atmospheric pressure growth |
1st Author's Name | Akinori Ubukata |
1st Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation() |
2nd Author's Name | Hiroki Tokunaga |
2nd Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
3rd Author's Name | Yoshiki Yano |
3rd Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
4th Author's Name | Nakao Akutsu |
4th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
5th Author's Name | Koh Matsumoto |
5th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
6th Author's Name | Toshiaki Yamazaki |
6th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
Date | 2004/10/14 |
Paper # | ED2004-122,CPM2004-96,LQE2004-60 |
Volume (vol) | vol.104 |
Number (no) | 359 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |