| Presentation | 2005/5/6 Charactarization of Nanocrystalline Silicon using Photoacoustic Method Masashi INOGUCHI, Qing Shen, Taro TOYODA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We applied a photoacoustic (PA) technique to study the optical absorption and thermal diffusivity of nanocrystalline silicon (NSi) samples. The NSi layers were formed on p-type Si wafers in an HF electrolyte. Three kinds of NSi samples that had undergone chemical post-etching were studied before and after UV irradiation for 2 h. We observed that a strong confinement effect occurred in all of the NSi samples from the blue shift of the band gap energy compared with that of crystalline Si, while the effective thermal diffusivities were almost two orders of the magnitude smaller than that of conventional Si crystals. The band gap shifted to higher energy and the effective thermal diffusivity decreased as the post-etching time increased. In the case of a NSi sample that was not chemically post-etched, the optical absorption and effective thermal diffusivity before and after UV irradiation were almost unchanged. However, for the NSi samples that were chemically post-etched, the optical absorption decreased and the effective thermal diffusivity increased after UV irradiation. This indicates that NSi samples that are post-etched are more readily affected by UV irradiation, i.e., oxidized by replacing Si-Hx bonds by Si-Ox, than those that do not undergo post-etching. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Porous silicon / Photoacoustic technique / Optical absorption / Thermal diffusivity / UV irradiation |
| Paper # | US2005-9 |
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| Conference Information | |
| Committee | US |
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| Conference Date | 2005/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Ultrasonics (US) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charactarization of Nanocrystalline Silicon using Photoacoustic Method |
| Sub Title (in English) | |
| Keyword(1) | Porous silicon |
| Keyword(2) | Photoacoustic technique |
| Keyword(3) | Optical absorption |
| Keyword(4) | Thermal diffusivity |
| Keyword(5) | UV irradiation |
| 1st Author's Name | Masashi INOGUCHI |
| 1st Author's Affiliation | Dept. Appl. Phys. & Chem., Univ. Electro-Commun() |
| 2nd Author's Name | Qing Shen |
| 2nd Author's Affiliation | Dept. Appl. Phys. & Chem., Univ. Electro-Commun:Course of Coherent Optical Science, Univ. Electro-Commun |
| 3rd Author's Name | Taro TOYODA |
| 3rd Author's Affiliation | Dept. Appl. Phys. & Chem., Univ. Electro-Commun:Course of Coherent Optical Science, Univ. Electro-Commun |
| Date | 2005/5/6 |
| Paper # | US2005-9 |
| Volume (vol) | vol.105 |
| Number (no) | 44 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |