| Presentation | 2004/8/13 MOSFET Current Drive Optimization Using Silicon Nitride Capping Layer S. PIDIN, T. MORI, R. NAKAMURA, T. SAIKI, S. SATOH, M. KASE, K. HASHIMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | NMOSFET strain engineering with highly tensile silicon nitride capping layer was studied by way of numerical simulations and device experiments. Using extensive process simulations we developed optimization guideline for NMOSFET strain engineering. At 45nm gate length and 1V supply voltage fabricated NMOSFET delivers 1.01mA/μm drive current for off-state current of 40nA/μm and physical gate oxide thickness of 1.25nm(TEM). These data demonstrate the best up to date NMOSFET current drivability [1-3]. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Stress / strain / MOSFET / current drivability |
| Paper # | SDM2004-152,ICD2004-94 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2004/8/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOSFET Current Drive Optimization Using Silicon Nitride Capping Layer |
| Sub Title (in English) | |
| Keyword(1) | Stress |
| Keyword(2) | strain |
| Keyword(3) | MOSFET |
| Keyword(4) | current drivability |
| 1st Author's Name | S. PIDIN |
| 1st Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div.,() |
| 2nd Author's Name | T. MORI |
| 2nd Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| 3rd Author's Name | R. NAKAMURA |
| 3rd Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| 4th Author's Name | T. SAIKI |
| 4th Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| 5th Author's Name | S. SATOH |
| 5th Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| 6th Author's Name | M. KASE |
| 6th Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| 7th Author's Name | K. HASHIMOTO |
| 7th Author's Affiliation | Fujitsu Ltd., Advanced LSI Development Div., |
| Date | 2004/8/13 |
| Paper # | SDM2004-152,ICD2004-94 |
| Volume (vol) | vol.104 |
| Number (no) | 251 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |