Presentation 2004/8/13
High Velocity Electron Injection into Channel Region in MOSFETs with Heterojunction Source Structures
Tomohisa MIZUNO, Naoharu SUGIYAMA, Tsutomu TEZUKA, Yoshihiko MORIYAMA, Shu NAKAHARAI, Tatsuro MAEDA, Shinichi TAKAGI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English) heterojunction / source / band-offset / high velocity electron injection
Paper # SDM2004-147,ICD2004-89
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Conference Information
Committee SDM
Conference Date 2004/8/13(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Velocity Electron Injection into Channel Region in MOSFETs with Heterojunction Source Structures
Sub Title (in English)
Keyword(1) heterojunction
Keyword(2) source
Keyword(3) band-offset
Keyword(4) high velocity electron injection
1st Author's Name Tomohisa MIZUNO
1st Author's Affiliation MIRAI-AIST()
2nd Author's Name Naoharu SUGIYAMA
2nd Author's Affiliation MIRAI-ASET
3rd Author's Name Tsutomu TEZUKA
3rd Author's Affiliation MIRAI-ASET
4th Author's Name Yoshihiko MORIYAMA
4th Author's Affiliation MIRAI-ASET
5th Author's Name Shu NAKAHARAI
5th Author's Affiliation MIRAI-ASET
6th Author's Name Tatsuro MAEDA
6th Author's Affiliation MIRAI-AIST
7th Author's Name Shinichi TAKAGI
7th Author's Affiliation MIRAI-AIST
Date 2004/8/13
Paper # SDM2004-147,ICD2004-89
Volume (vol) vol.104
Number (no) 249
Page pp.pp.-
#Pages 4
Date of Issue