Presentation | 2004/8/13 Corner Effect on body factor of short channel low-Fin FETs Toshiharu NAGUMO, Toshiro HIRAMOTO, |
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Abstract(in Japanese) | (See Japanese page) | ||
Abstract(in English) | Impact of Fin-corner shape on body factor γ of low-Fin (tri-gate) FET in the both cases of highly-doped channel and undoped channel has been investigated by means of three-dimensional device simulation. Behavior of both threshold voltage (V_ | ) and γ depends on whether V_ | is derived from on-state or off-state. In highly-doped low-Fin, γ derived from off-state characteristics (γ_ |
Keyword(in Japanese) | (See Japanese page) | ||
Keyword(in English) | FinFET / body effect / body factor / VTCMOS(variable threshold voltage CMOS) / corner effect | ||
Paper # | SDM2004-145,ICD2004-87 | ||
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Conference Information | |
Committee | SDM |
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Conference Date | 2004/8/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Corner Effect on body factor of short channel low-Fin FETs |
Sub Title (in English) | |
Keyword(1) | FinFET |
Keyword(2) | body effect |
Keyword(3) | body factor |
Keyword(4) | VTCMOS(variable threshold voltage CMOS) |
Keyword(5) | corner effect |
1st Author's Name | Toshiharu NAGUMO |
1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
2nd Author's Name | Toshiro HIRAMOTO |
2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
Date | 2004/8/13 |
Paper # | SDM2004-145,ICD2004-87 |
Volume (vol) | vol.104 |
Number (no) | 249 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |