Presentation 2001/11/15
Measurement of Carrier Escape Time in 40 Gbit/s Optical Modulator
Hideo ARIMOTO, Masataka SHIRAI, Shinji TSUJI,
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Abstract(in English) To reduce the hole pile-up and increase an optical power handling capacity in 40 Gbit/s semiconductor optical modulator, we fabricated three devices whose active layers consist of multi-quantum-well (MQW) having barrier bandgap wavelengths λ_b of 1.18, 1.3, and 1.4 μm. Escape times of holes from active layer were accurately measured to confirm the effect of longer λ_b on the promotion of carrier escape from well layers. The escape time becomes smaller with increasing λ_b and reaches a limit determined by the drift time in the active layer. Optical input power dependence of EO response was also measured accurately to quantify the optical power handling capacity. Devices with λ_b = 1.3 and 1.4 μm have larger capabilities by 2-3 dB than the device with λ_b = 1.18 μm.
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Keyword(in English) 40Gbit/s / Semiconductor optical modulator / Carrier escape time
Paper # OCS2001-98,OPE2001-102,LQE2001-96
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Committee OCS
Conference Date 2001/11/15(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Measurement of Carrier Escape Time in 40 Gbit/s Optical Modulator
Sub Title (in English)
Keyword(1) 40Gbit/s
Keyword(2) Semiconductor optical modulator
Keyword(3) Carrier escape time
1st Author's Name Hideo ARIMOTO
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Masataka SHIRAI
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Shinji TSUJI
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2001/11/15
Paper # OCS2001-98,OPE2001-102,LQE2001-96
Volume (vol) vol.101
Number (no) 448
Page pp.pp.-
#Pages 6
Date of Issue