Presentation 1995/10/24
Metal FEAs Fabricated with Local Oxidation of Polysilicon for Large-Area Display Applications
II Hwan Kim, Chun Gyoo Lee, Jong Duk Lee, Sang Jik Kwon,
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Abstract(in English) For large area displays, metal FEAs were fabricated with local oxidation of polysilicon. The field emitter arrays(FEAs) with 0.7-μm-diameter gate apertures were made, showing asymmetry of gate edge and roughness on gate surface. However, the electrical characteristics are well compared to the FEAs made from single crystal silicon. The anode current of 62.5 μA(0.1μA/tip) is measured at the gate bias of 52V for the 625-tip array, while the gate current was less than 0.3 % of the anode current.
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Keyword(in English) large-area display / polysilicon / LOCOS process / FEA
Paper # EID95-71
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Committee EID
Conference Date 1995/10/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Metal FEAs Fabricated with Local Oxidation of Polysilicon for Large-Area Display Applications
Sub Title (in English)
Keyword(1) large-area display
Keyword(2) polysilicon
Keyword(3) LOCOS process
Keyword(4) FEA
1st Author's Name II Hwan Kim
1st Author's Affiliation Inter-University Semiconductor Research Center(ISRC) and Dept. of Electronics Engineering, Seoul Nat'l Univ.()
2nd Author's Name Chun Gyoo Lee
2nd Author's Affiliation Inter-University Semiconductor Research Center(ISRC) and Dept. of Electronics Engineering, Seoul Nat'l Univ.
3rd Author's Name Jong Duk Lee
3rd Author's Affiliation Inter-University Semiconductor Research Center(ISRC) and Dept. of Electronics Engineering, Seoul Nat'l Univ.
4th Author's Name Sang Jik Kwon
4th Author's Affiliation Dept. of Electronics Engineering, Kyungwon Univ.
Date 1995/10/24
Paper # EID95-71
Volume (vol) vol.95
Number (no) 336
Page pp.pp.-
#Pages 4
Date of Issue