講演名 | 1995/10/24 Field Emission Behavior of Diamond-like Carbon Films , |
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抄録(英) | Field emission behaviors from (nitrogenated) diamond-like carbon (DLC) films deposited on p-type Si (100) wafer by r.f. plasma assisted CVD method were investigated. Bias voltage of the substrate was varied from - 100V to -900V at a fixed pressure of l0mTorr. Onset field of the film deposited at the bias voltage of -100V was 10V/μm, while those of the films deposited at higher bias voltage were 20-24V/μm. The effective work functions of all DLC films were 0.05 eV. Nitrogen incorporation to DLC films enhanced the field emission behavior. Depending on the nitrogen source, the effective work functions ranged from 0.02 to 0.04eV. This behavior may be related to more efficient transport carriers from doped Si, through the film, to the emitting surface. |
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キーワード(英) | Field emission behavior / Diamond-like carbon film / plasma CVD / Nitrogenated diamond-like carbon film |
資料番号 | EID95-69 |
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研究会 | EID |
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開催期間 | 1995/10/24(から1日開催) |
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申込み研究会 | Electronic Information Displays (EID) |
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本文の言語 | ENG |
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タイトル(英) | Field Emission Behavior of Diamond-like Carbon Films |
サブタイトル(和) | |
キーワード(1)(和/英) | / Field emission behavior |
第 1 著者 氏名(和/英) | / Kwang-Ryeol Lee |
第 1 著者 所属(和/英) | Division of Ceramics, KIST |
発表年月日 | 1995/10/24 |
資料番号 | EID95-69 |
巻番号(vol) | vol.95 |
号番号(no) | 336 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |