| Presentation | 1995/10/24 A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures Sung-Weon Kang, Jin-Ho Lee, Jong-Moon Park, Min Park, Sang-Gi Kim, Dong-Goo Kim, Kyoung-Ik Cho, Hyung Joun Yoo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon field emission cathodes were fabricated using thin-film techniques and 1.2 μm optical photolithography. With two-step reactive ion etching and thermal oxidation for tip sharpening, 1.2 μm height silicon pillars were formed. Gate oxide layer was deposited using an electron-beam evaporator. And then Ti_<0.1> W_<0.9> was sputtered for gate electrodes. As a result, the gate electrodes easily approach the oxidized cathodes. The gate hole diameter is greatly reduced to sub-halfmicron (< 0.5 μm) from the initial mask size (～1.2μm). The I-V characteristics of cathodes show low turn-on voltages (< 55 V) in ultrahigh vacuum (< 3.O × 10^<-7> Torr) and the linearity of Fowler-Nordheim plots. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | field emission cathodes / gate electrode / cathode electrode / turn-on voltage |
| Paper # | EID95-65 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1995/10/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures |
| Sub Title (in English) | |
| Keyword(1) | field emission cathodes |
| Keyword(2) | gate electrode |
| Keyword(3) | cathode electrode |
| Keyword(4) | turn-on voltage |
| 1st Author's Name | Sung-Weon Kang |
| 1st Author's Affiliation | Semiconductor Division, ETRI() |
| 2nd Author's Name | Jin-Ho Lee |
| 2nd Author's Affiliation | Semiconductor Division, ETRI |
| 3rd Author's Name | Jong-Moon Park |
| 3rd Author's Affiliation | Semiconductor Division, ETRI |
| 4th Author's Name | Min Park |
| 4th Author's Affiliation | Semiconductor Division, ETRI |
| 5th Author's Name | Sang-Gi Kim |
| 5th Author's Affiliation | Semiconductor Division, ETRI |
| 6th Author's Name | Dong-Goo Kim |
| 6th Author's Affiliation | Semiconductor Division, ETRI |
| 7th Author's Name | Kyoung-Ik Cho |
| 7th Author's Affiliation | Semiconductor Division, ETRI |
| 8th Author's Name | Hyung Joun Yoo |
| 8th Author's Affiliation | Semiconductor Division, ETRI |
| Date | 1995/10/24 |
| Paper # | EID95-65 |
| Volume (vol) | vol.95 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |