講演名 1995/10/24
Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
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抄録(和)
抄録(英) We fabricated and characterized silicon field emitter tip arrays by gate etch-back process. A very sharp tip of 1.1μm height was obtained by two step dry etching process and sharpening oxidation process. Polysilicon was deposited for gate electrodes and spin-on-glass was coated for planarization. After polysilicon etching by dry methods and dipping in buffered HF solution, we obtained a very sharp tip array. While this process is very simple and stable, the device has smaller gap space between the tip and the gate electrode and lower leakage currents than those fabricated by a conventional e-beam evaporated method. The resulting device has been observed by SEM and has been tested in ultrahigh vacuum (< 5x10^<-7> Torr) testing chamber. The measured emission current was 10.9 μA at 85V in 256 tip array.
キーワード(和)
キーワード(英) field emitter / SOG / cathode / Si / FED / vacuum microelectronics / etchback
資料番号 EID95-63
発行日

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開催期間 1995/10/24(から1日開催)
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本文の言語 ENG
タイトル(和)
サブタイトル(和)
タイトル(英) Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
サブタイトル(和)
キーワード(1)(和/英) / field emitter
第 1 著者 氏名(和/英) / Jin Ho Lee
第 1 著者 所属(和/英)
Semiconductor Div., Electronics and Telecommunications Research Institute
発表年月日 1995/10/24
資料番号 EID95-63
巻番号(vol) vol.95
号番号(no) 336
ページ範囲 pp.-
ページ数 4
発行日