Presentation 2001/10/5
Light-emitting diodes based on polysilanes
Satoshi Hoshino,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This article reports the progress in studies on polysilane-based light-emitting diodes (LEDs), which have been developed for potential ultraviolet or near-ultraviolet electroluminescent (EL) devices. Research activities to reveal the basic EL mechanism and to explore a suitable polymer structure for LED operation have resulted in demonstrating NUV EL generation at room temperature from single- and multilayer LEDs based on a diphenylpolysilane derivative. Discussion is made for a determinant factor of the molecular-weight-dependent EL efficiency of the single-layer LEDs and a mechanism leading to the observation of an improvement in the operating performance of the multi-layer LED with an electron transport layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) polysilane / α-conjugated polymer / light-emitting diodes / electroluminescence / near-ultraviolet
Paper # OME2001-84,OPE2001-73
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Conference Information
Committee OME
Conference Date 2001/10/5(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Light-emitting diodes based on polysilanes
Sub Title (in English)
Keyword(1) polysilane
Keyword(2) α-conjugated polymer
Keyword(3) light-emitting diodes
Keyword(4) electroluminescence
Keyword(5) near-ultraviolet
1st Author's Name Satoshi Hoshino
1st Author's Affiliation NTT Lifestyle and Environmental Technology Laboratories()
Date 2001/10/5
Paper # OME2001-84,OPE2001-73
Volume (vol) vol.101
Number (no) 344
Page pp.pp.-
#Pages 6
Date of Issue