Presentation 1998/7/24
New Three Dimensional (3D) Memory Array Architecture For Future Ultra High Density DRAM
Tetsuo Endoh, Katsuhisa Shinmei, Hiroshi Sakuraba, Fujio Masuoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Three dimensional(3D)memory array architecture is realized by stacking several cells in series vertically up on each cell which is located in two dimensional(2D)array matrix.Total bit-line capacitance of this proposed architecture's DRAM is suppressed to about 37% of normal DRAM, when one bit-line has 1K-bit cells and the same design rules are used.Moreover, array area of 1M-bit DRAM using the proposed architecture, is reduced to above 11.5% of normal DRAM using the same design rules.By describing above analyses, the advantages of this proposed 3D memory array architecture will be cleared.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) three dimensional(3D)memory / memory array architecture / Stacked-SGT / DRAM / SGT / bit-line capacitance
Paper # SDM98-113,ICD98-112
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Conference Information
Committee SDM
Conference Date 1998/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) New Three Dimensional (3D) Memory Array Architecture For Future Ultra High Density DRAM
Sub Title (in English)
Keyword(1) three dimensional(3D)memory
Keyword(2) memory array architecture
Keyword(3) Stacked-SGT
Keyword(4) DRAM
Keyword(5) SGT
Keyword(6) bit-line capacitance
1st Author's Name Tetsuo Endoh
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University,()
2nd Author's Name Katsuhisa Shinmei
2nd Author's Affiliation Research Institute of Electrical Communication, Tohoku University,
3rd Author's Name Hiroshi Sakuraba
3rd Author's Affiliation Research Institute of Electrical Communication, Tohoku University,
4th Author's Name Fujio Masuoka
4th Author's Affiliation Research Institute of Electrical Communication, Tohoku University,
Date 1998/7/24
Paper # SDM98-113,ICD98-112
Volume (vol) vol.98
Number (no) 194
Page pp.pp.-
#Pages 6
Date of Issue