Presentation 1998/7/24
A Sophisticated Bit-by-Bit Verifying Scheme for NAND EEPROM's
Kazushige Kanda, Hiroshi Nakamura, Ken-ichi Imamiya, Koji Sakui, Jun-ichi Miyamoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A sophisticated bit-by-bit verifying scheme, which is able to realize the tight programmed threshold voltage distribution of 0.8V, has been proposed for NAND EEPROM's [1].A new bit-by-bit verifying circuit is composed of a conventional sense amplifier and a dynamic latch circuit with only three teansistors, increasing less than 1% chip size of the 64M NAND EEPROM [2].
Keyword(in Japanese) (See Japanese page)
Keyword(in English) bit-by-bit verifying / threshold voltage distribution / program / NAND EEPROM
Paper # SDM98-110,ICD98-109
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Conference Information
Committee SDM
Conference Date 1998/7/24(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Sophisticated Bit-by-Bit Verifying Scheme for NAND EEPROM's
Sub Title (in English)
Keyword(1) bit-by-bit verifying
Keyword(2) threshold voltage distribution
Keyword(3) program
Keyword(4) NAND EEPROM
1st Author's Name Kazushige Kanda
1st Author's Affiliation ULSI Device Engineering Laboratory, Toshiba Corporation()
2nd Author's Name Hiroshi Nakamura
2nd Author's Affiliation ULSI Device Engineering Laboratory, Toshiba Corporation
3rd Author's Name Ken-ichi Imamiya
3rd Author's Affiliation ULSI Device Engineering Laboratory, Toshiba Corporation
4th Author's Name Koji Sakui
4th Author's Affiliation ULSI Device Engineering Laboratory, Toshiba Corporation
5th Author's Name Jun-ichi Miyamoto
5th Author's Affiliation ULSI Device Engineering Laboratory, Toshiba Corporation
Date 1998/7/24
Paper # SDM98-110,ICD98-109
Volume (vol) vol.98
Number (no) 194
Page pp.pp.-
#Pages 5
Date of Issue