| Presentation | 1998/7/24 Single Electron Devices Based on Nanocrystalline Silicon Shunri Oda, Dutta Amit, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-electron devices are promising candidates for future ultralarge-scale integrated devices, since they can control electron tunneling events which are associated with nanometer scale devices using Coulomb blockade and with extremely low power dissipation.We describe fabrication of monodispersed nanocrystalline silicon(nc-Si)by plasma processes and its electrical properties, followed by discussion for possible application for single-electron devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nanocrystalline silicon / quantum dots / single electron devices / plasma CVD |
| Paper # | SDM98-108,ICD98-107 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Single Electron Devices Based on Nanocrystalline Silicon |
| Sub Title (in English) | |
| Keyword(1) | Nanocrystalline silicon |
| Keyword(2) | quantum dots |
| Keyword(3) | single electron devices |
| Keyword(4) | plasma CVD |
| 1st Author's Name | Shunri Oda |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Dutta Amit |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 1998/7/24 |
| Paper # | SDM98-108,ICD98-107 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |