| Presentation | 1998/7/24 A Self-Reference Read Scheme for a 1T/1C FeRAM Junichi Yamada, Tohru Miwa, Hiroki Koike, Hideo Toyoshima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed here a self-reference read scheme for use with 1T/1C FeRAMs. It is able to overcome the reference voltage problem faced by conventional 1T/1C FeRAMs without the use of any reference cells. The proposed scheme employs a memory cell that is accessed twice, and it uses this cell to generate a reference voltage. This self-generated reference voltage is automatically kept between read bit line voltages, which correspond stored data("1"and"0"). We have designed and fabricated a test device, and confirmed the viability of the read scheme. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 1T/1C / FeRAM / ferroelectric / self-reference / reference voltage |
| Paper # | SDM98-107,ICD98-106 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Self-Reference Read Scheme for a 1T/1C FeRAM |
| Sub Title (in English) | |
| Keyword(1) | 1T/1C |
| Keyword(2) | FeRAM |
| Keyword(3) | ferroelectric |
| Keyword(4) | self-reference |
| Keyword(5) | reference voltage |
| 1st Author's Name | Junichi Yamada |
| 1st Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Tohru Miwa |
| 2nd Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
| 3rd Author's Name | Hiroki Koike |
| 3rd Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
| 4th Author's Name | Hideo Toyoshima |
| 4th Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
| Date | 1998/7/24 |
| Paper # | SDM98-107,ICD98-106 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |