| Presentation | 1998/7/24 A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application Kwang-Ho Kim, Chae-Gyu Kim, Soon-Won Jung, Sang-Woo Lee, Jong-Son Lyu, Byoung-Gon Yu, Won-Jae Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | N-channel metal-ferroelectric-semiconductor field-effect-transistors(MFSFET's)by using rapid thermal annealed LiNbO_3/Si(100)structures were fabricated and demonstrated nonvolatile memory operations of the MFSFET's. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 cm^2/V・s and 0.16 mS/mm, respectively.The drain current of the "on"state was more than 4 orders of magnitude larger than the "off"state current at the same "read"gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ±3V, which is applicable to low power integrated circuits, was used for polarization reversal. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric film / LiNbO_3/Si(100)structure / MFSFET / nonvolatile memory / rapid thermal annealing |
| Paper # | SDM98-106,ICD98-105 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | KOR |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric film |
| Keyword(2) | LiNbO_3/Si(100)structure |
| Keyword(3) | MFSFET |
| Keyword(4) | nonvolatile memory |
| Keyword(5) | rapid thermal annealing |
| 1st Author's Name | Kwang-Ho Kim |
| 1st Author's Affiliation | Department of Semiconductor Engineering, Cheongju University,() |
| 2nd Author's Name | Chae-Gyu Kim |
| 2nd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University, |
| 3rd Author's Name | Soon-Won Jung |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University, |
| 4th Author's Name | Sang-Woo Lee |
| 4th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University, |
| 5th Author's Name | Jong-Son Lyu |
| 5th Author's Affiliation | Electronics and Telecommunications Research Institute |
| 6th Author's Name | Byoung-Gon Yu |
| 6th Author's Affiliation | Electronics and Telecommunications Research Institute |
| 7th Author's Name | Won-Jae Lee |
| 7th Author's Affiliation | Electronics and Telecommunicatications Research Institute |
| Date | 1998/7/24 |
| Paper # | SDM98-106,ICD98-105 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |