| Presentation | 1998/7/24 Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure Byoung-Gon Yu, Won-Jae Lee, Jong-Son Lyu, Jin-Hyo Lee, Bo Woo Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferroelectric thin films have been studied for the application of MFIS(Metal-Ferroelectric-Insulator-Semiconductor)structure to non-volatile memory devices. Most important requirement of the ferroelectric thin films for MFISFET is an endurance of the hysteretic characteristics of the ferroelectric film at high temperature during the thermal cycles of source/drain formation and silicon dioxide glass flowing.To obtain optimum parameters of the ferroelectric films for reasonable operation as a switching transistor, I-V characteristics of MFIS were calculated by using Miller's MFIS model, and drain current and hysteretic window of MFISFET have also been investigated.Crystalline structures and element profiles in the film as well as remanent polarization of the MFIS capacitors were also investigated.The calculated results were compared with the experimental ones from the fabricated MFIS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BaMgF_4 / SBT / Remanent polarization / Ferroelectric switching |
| Paper # | SDM98-105,ICD98-104 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | KOR |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure |
| Sub Title (in English) | |
| Keyword(1) | BaMgF_4 |
| Keyword(2) | SBT |
| Keyword(3) | Remanent polarization |
| Keyword(4) | Ferroelectric switching |
| 1st Author's Name | Byoung-Gon Yu |
| 1st Author's Affiliation | Semiconductor Division, ETRI,() |
| 2nd Author's Name | Won-Jae Lee |
| 2nd Author's Affiliation | Semiconductor Division, ETRI, |
| 3rd Author's Name | Jong-Son Lyu |
| 3rd Author's Affiliation | Semiconductor Division, ETRI, |
| 4th Author's Name | Jin-Hyo Lee |
| 4th Author's Affiliation | Semiconductor Division, ETRI, |
| 5th Author's Name | Bo Woo Kim |
| 5th Author's Affiliation | Semiconductor Division, ETRI, |
| Date | 1998/7/24 |
| Paper # | SDM98-105,ICD98-104 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |