| Presentation | 1998/7/24 Electrical Properties of Ferroelectric Bi_4Ti_3O_12 Film Grown on Si Substrate Using Bi_2SiO_5 Buffer Layer Takeshi KIJIMA, Hironori MATSUNAGA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 100, 200 and 400nm thick Bi_4Ti_3O_12 thin films were prepared on Si(100)substrate using 30nm-Bi_2SiO_5 as a buffer layer by MOCVD method.It is demonstrated that c-axis oriented Bi_4Ti_3O_12 films can be grown on Si substrate at 500℃ using a-axis oriented Bi_2SiO_5 buffer layer.The capacitance-vs-voltage(C-V) characteristics of Pt/Bi_4Ti_3O_12/Bi_2SiO_5/Si(MFIS)structures have ferroelectric switching properties, and the memory windows were about 0.8, 1.5 and 2.9V for 100, 200 and 400nm-Bi_4Ti_3O_12s, respectively. Furthermore, it is shown that the capacitance at zero-bias shows almost constant for 11 days. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MF(1)S-FET / ferroelectric thin film / Bi_4Ti_3O_12 / bismuth silicate / Bi_2SiO_5 / MOCVD method |
| Paper # | SDM98-104,ICD98-103 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Ferroelectric Bi_4Ti_3O_12 Film Grown on Si Substrate Using Bi_2SiO_5 Buffer Layer |
| Sub Title (in English) | |
| Keyword(1) | MF(1)S-FET |
| Keyword(2) | ferroelectric thin film |
| Keyword(3) | Bi_4Ti_3O_12 |
| Keyword(4) | bismuth silicate |
| Keyword(5) | Bi_2SiO_5 |
| Keyword(6) | MOCVD method |
| 1st Author's Name | Takeshi KIJIMA |
| 1st Author's Affiliation | Functional Devices Laboratories, SHARP Corporation,() |
| 2nd Author's Name | Hironori MATSUNAGA |
| 2nd Author's Affiliation | Functional Devices Laboratories, SHARP Corporation, |
| Date | 1998/7/24 |
| Paper # | SDM98-104,ICD98-103 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |