| Presentation | 1998/7/24 Growth of ferroelectric YMnO_3 thin films on Si(111)substrates by MBE method. Shogo Imada, Shigeto Shouriki, Eisuke Tokumitsu, Hiroshi Ishiwara, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferroelectric YMnO_3 thin films are grown on Si(111) substrates using Y_2O_3 buffer layers by molecular beam epitaxy(MBE). It is shown by the reflection high-energy electron diffraction(RHEED)analyses that both Y_2O_3 and YMnO_3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM(full width at half maximum)value for YMnO_3 films is 1.5゜. It is demonstrated that, C-V characteristics of Al/YMnO_3/Y_20_3/Si structures indicate the ferroelectric properties of YMnO_3 films with a memory window of 0.3V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / Y_2O_3 / YMnO_3 / molecular beam epitaxy / epitaxial growth / Si |
| Paper # | SDM98-103,ICD98-102 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of ferroelectric YMnO_3 thin films on Si(111)substrates by MBE method. |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | Y_2O_3 |
| Keyword(3) | YMnO_3 |
| Keyword(4) | molecular beam epitaxy |
| Keyword(5) | epitaxial growth |
| Keyword(6) | Si |
| 1st Author's Name | Shogo Imada |
| 1st Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology,() |
| 2nd Author's Name | Shigeto Shouriki |
| 2nd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology, |
| 3rd Author's Name | Eisuke Tokumitsu |
| 3rd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology, |
| 4th Author's Name | Hiroshi Ishiwara |
| 4th Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology, |
| Date | 1998/7/24 |
| Paper # | SDM98-103,ICD98-102 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |