Presentation 1998/7/24
Effect of SOG(Spin on Glass)on formation of PbZr_0.52Ti_0.48O_3 for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure
Yeon-Hwa Choi, Chul-Ju Kim,
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Abstract(in English) We proposed SOG as the buffer layer for MFIS structure and investigated the effect of SOG on formation of PZT.The formed PZT on SOG had a smooth surface morphology and the perovskite phase though the annealing temperature of PZT was low as the 450℃ and the crystalline property of SOG was amorphous.The electric characteristics of MFIS structure with Pt/PZT/SOG/Si were obtained the memory window in the capacitance-voltage curve was about 2.5V and the leakage current density was measured below 5×10^-7A/cm^2 at 15V(500kV/cm).And the P-E characteristics of PZT/SOG capacitors were so good. P_r and E_c were 26μC/cm^2 and 60kV/cm, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PZT / MFIS structure / buffer layer / SOG / planarization / low temperature process
Paper # SDM98-102,ICD98-101
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Committee SDM
Conference Date 1998/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language KOR
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of SOG(Spin on Glass)on formation of PbZr_0.52Ti_0.48O_3 for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure
Sub Title (in English)
Keyword(1) PZT
Keyword(2) MFIS structure
Keyword(3) buffer layer
Keyword(4) SOG
Keyword(5) planarization
Keyword(6) low temperature process
1st Author's Name Yeon-Hwa Choi
1st Author's Affiliation Dept.of Electronic Engineering, The University of Seoul()
2nd Author's Name Chul-Ju Kim
2nd Author's Affiliation Dept.of Electronic Engineering, The University of Seoul
Date 1998/7/24
Paper # SDM98-102,ICD98-101
Volume (vol) vol.98
Number (no) 194
Page pp.pp.-
#Pages 6
Date of Issue