| Presentation | 1998/7/24 Effect of Pt Electrode Orientation on SrBi_2Ta_2O_9 Thin Films Prepared by Sol-Gel Method Ichiro Koiwa, Hiroyo Kato, Takao Kanehara, Akira Hashimoto, Yoshihiro Sawada, Noboru Ichinose, Tetsuya Osaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SrBi_2Ta_2O_9(SBT)thin films are drawing attention as fatigue-free materials. We have prepared SBT films using our original sol-gel method and studied effects of Pt electrode crystal-orientation on SBT properties. Peak intensities of the Pt(111)plane were increased by annealing at 750℃ for 30min in an O_2 atmosphere and those of Pt(200)plane decreased.Orientation changes of Pt electrode by annealing were different for the types of Pt electrode.Effects of Pt electrode orientation on SBT film properties are very weak, scarcely affecting either structure or electrical properties. Formation of SBT films on Pt electrodes suppressed the orientation change of Pt electrodes by annealing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrBi_2Ta_2O_9 thin film / Sol-Gel method / Pt electrode / Crystal orientation / Ferroelectric properties / Heat treatment change |
| Paper # | SDM98-100,ICD98-99 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Pt Electrode Orientation on SrBi_2Ta_2O_9 Thin Films Prepared by Sol-Gel Method |
| Sub Title (in English) | |
| Keyword(1) | SrBi_2Ta_2O_9 thin film |
| Keyword(2) | Sol-Gel method |
| Keyword(3) | Pt electrode |
| Keyword(4) | Crystal orientation |
| Keyword(5) | Ferroelectric properties |
| Keyword(6) | Heat treatment change |
| 1st Author's Name | Ichiro Koiwa |
| 1st Author's Affiliation | Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co.Ltd.,() |
| 2nd Author's Name | Hiroyo Kato |
| 2nd Author's Affiliation | Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co.Ltd., |
| 3rd Author's Name | Takao Kanehara |
| 3rd Author's Affiliation | Semiconductor Technology Laboratory, Research and Development Group, Oki Electric Industry Co.Ltd., |
| 4th Author's Name | Akira Hashimoto |
| 4th Author's Affiliation | Specialty Development Division 1, Research & Development Department, Tokyo Ohka Kogyo Co.Ltd. |
| 5th Author's Name | Yoshihiro Sawada |
| 5th Author's Affiliation | Specialty Development Division 1, Research & Development Department, Tokyo Ohka Kogyo Co.Ltd. |
| 6th Author's Name | Noboru Ichinose |
| 6th Author's Affiliation | School of Science and Engineering, Waseda University, |
| 7th Author's Name | Tetsuya Osaka |
| 7th Author's Affiliation | School of Science and Engineering, Waseda University, |
| Date | 1998/7/24 |
| Paper # | SDM98-100,ICD98-99 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |