Presentation 1998/7/24
Implementation of isolation structures by top-surface imaging process
Hyoung-Gi Kim, Myoung-Soo Kim, Cheol-Kyu Bok, Hyeong-Soo Kim, Ki-Ho Baik,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is well that TIPS(Top-surface Imaging Process by Silylation)process has a feasibility to overcome lots of problems induced from single-layers resist process.Nevertheless, chip makers have been reluctant to apply this process to Giga technogy with process issues such as Line Edge Roughness(LER), residues, Critical Dimension(CD) unifromity, and rework scheme.In this paper, we will describe the results of 180nm isolation structures of 1G bit DRAM on process issues.We have also developed rework procedures to remove the resist pattern formed after dry development by using BOE and clean-D(H_2SO_4 and H_2O_2 mixture)solutions.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TIPS(Top-surface Imaging Process by Silylation) / DUV lithography / rework / silylation / dry development / Line Edge Roughness(LER)
Paper # SDM98-99,ICD98-98
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Conference Information
Committee SDM
Conference Date 1998/7/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Implementation of isolation structures by top-surface imaging process
Sub Title (in English)
Keyword(1) TIPS(Top-surface Imaging Process by Silylation)
Keyword(2) DUV lithography
Keyword(3) rework
Keyword(4) silylation
Keyword(5) dry development
Keyword(6) Line Edge Roughness(LER)
1st Author's Name Hyoung-Gi Kim
1st Author's Affiliation Hyundai Electronics Induestries.()
2nd Author's Name Myoung-Soo Kim
2nd Author's Affiliation Hyundai Electronics Induestries.
3rd Author's Name Cheol-Kyu Bok
3rd Author's Affiliation Hyundai Electronics Induestries.
4th Author's Name Hyeong-Soo Kim
4th Author's Affiliation Hyundai Electronics Induestries.
5th Author's Name Ki-Ho Baik
5th Author's Affiliation Hyundai Electronics Induestries.
Date 1998/7/24
Paper # SDM98-99,ICD98-98
Volume (vol) vol.98
Number (no) 194
Page pp.pp.-
#Pages 7
Date of Issue