講演名 | 1998/7/24 Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology , |
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抄録(和) | |
抄録(英) | The integration issues of the application of HSQ as the non-etch back IMD of logic devices with W via plug were investigated.HSQ based IMD process could reduce the processing time of CMP by 33% compared to O3-TEOS USG based IMD with same global planarity.Degassing process at 550℃ was necessary to obtain the reliable via contact resistance with high temperature storage (HTS) test at 350℃ for 300 hours.Using HSQ in IMD, the parasitic capacitance decreased by 20% compared to that of O3-TEOS USG based IMD.The parasitic capacitance of HSQ was nearly the same as before and after thermal stressing at 350℃ for 300 hours.When HSQ was used as IMD material, the characteristics of transistor and time zero dielectric breakdown voltage(TZDB)exhibited equivalent to those of O3-TEOS USG based IMD.We could successfully integrate the 3-level metallization structure with HSQ in IMD for 0.35μm logic devices. |
キーワード(和) | |
キーワード(英) | HSQ / CMP / parasitic capacitance / via resistance / IMD |
資料番号 | SDM98-97,ICD98-96 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 1998/7/24(から1日開催) |
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委員長氏名(和) | |
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幹事氏名(和) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | KOR |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology |
サブタイトル(和) | |
キーワード(1)(和/英) | / HSQ |
第 1 著者 氏名(和/英) | / Hee-Sook Park |
第 1 著者 所属(和/英) | Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD. |
発表年月日 | 1998/7/24 |
資料番号 | SDM98-97,ICD98-96 |
巻番号(vol) | vol.98 |
号番号(no) | 194 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |