| Presentation | 1998/7/24 A Work Function Control Method of WSix Gate Electrode with Impurity Ion Implantation hiroshi Komatsu, Yoshihiro Miyazawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A method for controlling work function has been investigated using doped Tungsten Silicide(WSix)as a gate material. Impurity was doped into the WSix gate with ion implantation and the work function of WSix was observed to be well controlled in the range of about +-0.3V around the Si mid-gap with the ion dose up to 5e15cm-2.This technology makes it possible to control MOS transistor Vth without channel impurity dose adjustment. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gate electrode / work function / WSix / impurity / Vth |
| Paper # | SDM98-96,ICD98-95 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Work Function Control Method of WSix Gate Electrode with Impurity Ion Implantation |
| Sub Title (in English) | |
| Keyword(1) | gate electrode |
| Keyword(2) | work function |
| Keyword(3) | WSix |
| Keyword(4) | impurity |
| Keyword(5) | Vth |
| 1st Author's Name | hiroshi Komatsu |
| 1st Author's Affiliation | ULSI R&D Labs., Semiconductor Co., Sony Corp.() |
| 2nd Author's Name | Yoshihiro Miyazawa |
| 2nd Author's Affiliation | ULSI R&D Labs., Semiconductor Co., Sony Corp. |
| Date | 1998/7/24 |
| Paper # | SDM98-96,ICD98-95 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |