| Presentation | 1998/7/24 Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Jin Won Park, Jeong Soo Byun, Jac Jeong Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a new approach for low reverse leakage current in n+/p titanium-silicided shallow junctions(Xj=130nm)featuring mediated ion implantation of Ti-silicide(MITS).After formation of source/drain regions, Ti deposition and a lst heat-treatment was used to form C-49 Ti-silicide.Subsequently, MITS arsenic ions were implanted and a 2nd heat-treatment carried out at 850℃ to form C-54 Ti-silicide. In spite of no additional drive-in process following to 2nd annealing, the implanted As diffused quite well into Si substrate and thus the reverse leakage current of the n+/p junctions was greatly reduced from 200 nA/cm^2 to 3 nA/cm^2.This technique satisfies low sheet resistance(<5Ω/sq.)and leakage current of Ti-silicided shallow junctions simultaneously. We conclude that C-49 TiSi_2 can be used as a diffusion source without causing any degradation of sub-quarter micron n-MOSFET's. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | titanium salicide / diffusion source / shallow junction / low leakage current |
| Paper # | SDM98-95,ICD98-94 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | KOR |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source |
| Sub Title (in English) | |
| Keyword(1) | titanium salicide |
| Keyword(2) | diffusion source |
| Keyword(3) | shallow junction |
| Keyword(4) | low leakage current |
| 1st Author's Name | Dong Kyun Sohn |
| 1st Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd.,() |
| 2nd Author's Name | Ji-Soo Park |
| 2nd Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd., |
| 3rd Author's Name | Byung Hak Lee |
| 3rd Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd., |
| 4th Author's Name | Jin Won Park |
| 4th Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd., |
| 5th Author's Name | Jeong Soo Byun |
| 5th Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd., |
| 6th Author's Name | Jac Jeong Kim |
| 6th Author's Affiliation | Process Team, R&D Division, LG Semicon.Co.Ltd., |
| Date | 1998/7/24 |
| Paper # | SDM98-95,ICD98-94 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |