| Presentation | 1998/7/24 A Study on Junction Profile near Si/Oxide Interface due to Transient Enhanced Diffusion Effect in MOSFET Jeonghwan Son, Hyunwook Song, Seunfho Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Source/drain junction profile of MOSFET with trench isolation was studied by using process simulation with TED model.It was observed that the junction depth near the Si/oxide interface is much shallower than that of the bulk region.The origin of the shallow junction formation near the interface is related to TED caused by source/drain implantation damage.The shallow junction was formed due to the counter doping by B pile-up in NMOS but it was formed due to the retardation of B diffusion and B segregation in PMOS.The junction leakage for MOSFET with N_2O annealed interface was reduced and this result was well determined by simulation result. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si/Oxide Interface / Transient Enhanced Diffusion / Interstitial / Junction Leakage |
| Paper # | SDM98-94,ICD98-93 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | KOR |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Study on Junction Profile near Si/Oxide Interface due to Transient Enhanced Diffusion Effect in MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Si/Oxide Interface |
| Keyword(2) | Transient Enhanced Diffusion |
| Keyword(3) | Interstitial |
| Keyword(4) | Junction Leakage |
| 1st Author's Name | Jeonghwan Son |
| 1st Author's Affiliation | R&D Division, LG Semicon Co. Ltd.() |
| 2nd Author's Name | Hyunwook Song |
| 2nd Author's Affiliation | R&D Division, LG Semicon Co. Ltd. |
| 3rd Author's Name | Seunfho Lee |
| 3rd Author's Affiliation | R&D Division, LG Semicon Co. Ltd. |
| Date | 1998/7/24 |
| Paper # | SDM98-94,ICD98-93 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |