| Presentation | 1998/7/24 Gate Oxide Formation at Low Temperature using UV-O_2 Oxidation A. Teramoto, Y. Ohno, H. Miyoshi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed and evaluated SiO_2 films formed in a dry oxygen ambient at 600-900℃ under ultraviolet irradiation (UV-O_2 oxidation).It has been found that the TDDB, stress induced leakage current and the hole-trapping characteristics of SiO_2 films formed by the UV-O_2 oxidation at 900℃, are superior to those formed by the conventional dry oxidation.The TDDB lifetime of the SiO_2 films formed by the UV-O_2 oxidation at 600℃ is also longer than that formed by the conventional dry oxidation at 900℃ and wet oxidation at 600℃.These facts indicate that the highly reliable gate oxide is realized by the UV-O_2 oxidation.The UV-O_2 oxidation.technology is very useful for the production of future devices which require low-temperature processing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon dioxide / ultraviolet rays / low temperature oxidation / TDDB / SILC / hole trap |
| Paper # | SDM98-93,ICD98-92 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Oxide Formation at Low Temperature using UV-O_2 Oxidation |
| Sub Title (in English) | |
| Keyword(1) | silicon dioxide |
| Keyword(2) | ultraviolet rays |
| Keyword(3) | low temperature oxidation |
| Keyword(4) | TDDB |
| Keyword(5) | SILC |
| Keyword(6) | hole trap |
| 1st Author's Name | A. Teramoto |
| 1st Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center() |
| 2nd Author's Name | Y. Ohno |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
| 3rd Author's Name | H. Miyoshi |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
| Date | 1998/7/24 |
| Paper # | SDM98-93,ICD98-92 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |