| Presentation | 1998/7/24 Formation of nm-thick SiO_2 at Low Temperatures by Activated Oxygen and Its Trap Analysis by Transient Discharge Current K. Moriizumi, T. Futatsuyama, Y. Ueda, T. Fuyuki, H. Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A novel technique of low-temperature oxidation using activated oxygen species to control SiO_2 nm-thickness was developed.Electronic properties of formed SiO_2 were analyzed in detail using current/voltage and capacitance/voltage characteristics.Observed tunneling current showed high-quality interface formation as in nm-thick thermal oxides formed at high temperatures.The energy level and spatial distribution of electron traps in the films were revealed quantitatively by the discharge current transient spectroscopy.The feasibility of grown SiO_2 films for gate oxides of MOSFETs was also demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | activated oxygen / nm-thickness SiO_2 / tunneling current / DCTS / electron traps |
| Paper # | SDM98-92,ICD98-91 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/7/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of nm-thick SiO_2 at Low Temperatures by Activated Oxygen and Its Trap Analysis by Transient Discharge Current |
| Sub Title (in English) | |
| Keyword(1) | activated oxygen |
| Keyword(2) | nm-thickness SiO_2 |
| Keyword(3) | tunneling current |
| Keyword(4) | DCTS |
| Keyword(5) | electron traps |
| 1st Author's Name | K. Moriizumi |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University,() |
| 2nd Author's Name | T. Futatsuyama |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University, |
| 3rd Author's Name | Y. Ueda |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University, |
| 4th Author's Name | T. Fuyuki |
| 4th Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| 5th Author's Name | H. Matsunami |
| 5th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University, |
| Date | 1998/7/24 |
| Paper # | SDM98-92,ICD98-91 |
| Volume (vol) | vol.98 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |