| Presentation | 2001/7/27 A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides Tatsuya Ohguro, Takeshi Nagano, Makoto Fujiwara, Mariko Takayanagi, Kei Shimizu, Hisayo Momose, Shinichi Nakamura, Yoshiaki Toyoshima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | There are limitations of interface state density at oxynitride/Si substrate in order to satisfy 1999 road map requirements. Because 1/f noise and ft value in S.C PMOS degrade due to higher-density interface state density inside the valence band. A buried channel type MOSFET is effective for suppressing these degradations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | oxynitride / 1/f noise / fT / buried channel type |
| Paper # | SDM2001-138,ICD2001-61 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/7/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides |
| Sub Title (in English) | |
| Keyword(1) | oxynitride |
| Keyword(2) | 1/f noise |
| Keyword(3) | fT |
| Keyword(4) | buried channel type |
| 1st Author's Name | Tatsuya Ohguro |
| 1st Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development() |
| 2nd Author's Name | Takeshi Nagano |
| 2nd Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 3rd Author's Name | Makoto Fujiwara |
| 3rd Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 4th Author's Name | Mariko Takayanagi |
| 4th Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 5th Author's Name | Kei Shimizu |
| 5th Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 6th Author's Name | Hisayo Momose |
| 6th Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 7th Author's Name | Shinichi Nakamura |
| 7th Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| 8th Author's Name | Yoshiaki Toyoshima |
| 8th Author's Affiliation | Toshiba corporation, Semiconductor company, System LSI Research & Development |
| Date | 2001/7/27 |
| Paper # | SDM2001-138,ICD2001-61 |
| Volume (vol) | vol.101 |
| Number (no) | 247 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |