Presentation	2001/7/27 Comparison of Measurement Methods of Interface Trap Density for n-MOSFETs with Si-Implanted Gate-SiO_2 Toshihiro Matsuda, Ryosuke Takezawa, Kazunori Arakawa, Masahiro Yasuda, Takashi Ohzone, Etsumasa Kameda,
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Abstract(in English)	Effects of channel B-implantation before gate oxidation and heavy Si-implantation into the gate-SiO_2 on interface trap density D_ distribution in the energy gap for n-MOSFETs are analyzed by the following three different measurement methods ; (I)high-low frequency capacitance, (II)subthreshold current, and(III)charge pumping. These threee methods produce the similar results of D_. They indicate that the channel B^+-dose scarcely has much effect on D_ at midgap and increases as the larger amount of Si-dose gives the increase of the D_. The method I can provide D_ distribution across the majority of the bandgap and may cause an underestimation of D_. The method II is convenient with a reasonable accuracy due to the simple DC measurement.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	MOSFET / gate oxide / interface trap density / silicon / ion implantation
Paper #	SDM2001-136,ICD2001-59
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Committee	SDM
Conference Date	2001/7/27(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Comparison of Measurement Methods of Interface Trap Density for n-MOSFETs with Si-Implanted Gate-SiO_2
Sub Title (in English)
Keyword(1)	MOSFET
Keyword(2)	gate oxide
Keyword(3)	interface trap density
Keyword(4)	silicon
Keyword(5)	ion implantation
1st Author's Name	Toshihiro Matsuda
1st Author's Affiliation	Department of Electronics and Informatics, Toyama Prefectural University()
2nd Author's Name	Ryosuke Takezawa
2nd Author's Affiliation	Department of Electronics and Informatics, Toyama Prefectural University
3rd Author's Name	Kazunori Arakawa
3rd Author's Affiliation	Department of Electronics and Informatics, Toyama Prefectural University
4th Author's Name	Masahiro Yasuda
4th Author's Affiliation	Department of Electronics and Informatics, Toyama Prefectural University
5th Author's Name	Takashi Ohzone
5th Author's Affiliation	Department of Electronics and Informatics, Toyama Prefectural University
6th Author's Name	Etsumasa Kameda
6th Author's Affiliation	Department of Electrical Engineering, Toyama National College of Technology
Date	2001/7/27
Paper #	SDM2001-136,ICD2001-59
Volume (vol)	vol.101
Number (no)	247
Page	pp.pp.-
#Pages	7
Date of Issue