Presentation 1997/2/20
A Prospect of a Microwave Application of Silicon MOS device
Akira Matsuzawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper reviews a prospect of a microwave application of Silicon MOS device. The cutoff frequency of the silicon MOS device is already higher than that of the silicon bipolar devices and f_T of more than 100GHz has been reported and it will increase with the progress of scaled device. Very good Noise Figure of 0.7dB has been obtained mainly due to the gate resistance reduction. Thus, it can be seen that we can apply the discrete silicon MOS device to the Microwave range. However, the remained issues for realizing the combination of RF and base-band circuits on a chip is cross talk noise between digital circuits and RF circuits.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOS / Microwave / radio frequency / cutoff frequency / noise / linearity
Paper # A・P96-165,EMCJ96-100,RCS96-179,MW96-205
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Conference Date 1997/2/20(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Prospect of a Microwave Application of Silicon MOS device
Sub Title (in English)
Keyword(1) MOS
Keyword(2) Microwave
Keyword(3) radio frequency
Keyword(4) cutoff frequency
Keyword(5) noise
Keyword(6) linearity
1st Author's Name Akira Matsuzawa
1st Author's Affiliation Matsushita Electric Industrial, CO., LTD.()
Date 1997/2/20
Paper # A・P96-165,EMCJ96-100,RCS96-179,MW96-205
Volume (vol) vol.96
Number (no) 533
Page pp.pp.-
#Pages 7
Date of Issue