Presentation | 1997/2/20 A Prospect of a Microwave Application of Silicon MOS device Akira Matsuzawa, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper reviews a prospect of a microwave application of Silicon MOS device. The cutoff frequency of the silicon MOS device is already higher than that of the silicon bipolar devices and f_T of more than 100GHz has been reported and it will increase with the progress of scaled device. Very good Noise Figure of 0.7dB has been obtained mainly due to the gate resistance reduction. Thus, it can be seen that we can apply the discrete silicon MOS device to the Microwave range. However, the remained issues for realizing the combination of RF and base-band circuits on a chip is cross talk noise between digital circuits and RF circuits. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOS / Microwave / radio frequency / cutoff frequency / noise / linearity |
Paper # | A・P96-165,EMCJ96-100,RCS96-179,MW96-205 |
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Conference Information | |
Committee | EMCJ |
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Conference Date | 1997/2/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electromagnetic Compatibility (EMCJ) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Prospect of a Microwave Application of Silicon MOS device |
Sub Title (in English) | |
Keyword(1) | MOS |
Keyword(2) | Microwave |
Keyword(3) | radio frequency |
Keyword(4) | cutoff frequency |
Keyword(5) | noise |
Keyword(6) | linearity |
1st Author's Name | Akira Matsuzawa |
1st Author's Affiliation | Matsushita Electric Industrial, CO., LTD.() |
Date | 1997/2/20 |
Paper # | A・P96-165,EMCJ96-100,RCS96-179,MW96-205 |
Volume (vol) | vol.96 |
Number (no) | 527 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |