Presentation 2002/5/16
Performance of UV-LED grown on A1_xGa_1-xN with low-dislocation density
Shun TAKANAMI, Atsushi MIYAZAKI, Shinji TERAO, Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI,
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Abstract(in English) To realize high efficiency UV light emitting devices, thick AlGaN films with high-AlN molar fraction and high-crystalline quality are essential. Then, we propose the hetero-ELO growth. It comprises a first selective growth of GaN triangular-shape seed crystal through periodic SiO_2 stripe masks and a second lateral growth of u-AlGaN layer through a low-temperature-deposited AlN interlayer. This technique resulted in the dislocation density of as low as mid-10^7cm^-2 whole wafer. UV-LED with an emission wavelength of 363nm and output power of 2.6mW at 100mA was successfully fabricated.
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Keyword(in English) low-dislocation density Al_xGa_1-xN / hetero-ELO / UV-LED
Paper # CPM2002-22
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Conference Date 2002/5/16(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance of UV-LED grown on A1_xGa_1-xN with low-dislocation density
Sub Title (in English)
Keyword(1) low-dislocation density Al_xGa_1-xN
Keyword(2) hetero-ELO
Keyword(3) UV-LED
1st Author's Name Shun TAKANAMI
1st Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University()
2nd Author's Name Atsushi MIYAZAKI
2nd Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
3rd Author's Name Shinji TERAO
3rd Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
4th Author's Name Motoaki IWAYA
4th Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
5th Author's Name Satoshi KAMIYAMA
5th Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
6th Author's Name Hiroshi AMANO
6th Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
7th Author's Name Isamu AKASAKI
7th Author's Affiliation High-Tech Research Center, Faculty of Science and Technology, Meijo University
Date 2002/5/16
Paper # CPM2002-22
Volume (vol) vol.102
Number (no) 76
Page pp.pp.-
#Pages 6
Date of Issue