| Presentation | 2002/5/16 Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Norifumi KAMESHIRO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / (001)Si / MOVPE / Selective Area Growth / heterostructure |
| Paper # | CPM2002-14 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/5/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | (001)Si |
| Keyword(3) | MOVPE |
| Keyword(4) | Selective Area Growth |
| Keyword(5) | heterostructure |
| 1st Author's Name | Norifumi KAMESHIRO |
| 1st Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Yoshio HONDA |
| 2nd Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Masahito YAMAGUCHI |
| 3rd Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University |
| 4th Author's Name | Nobuhiko SAWAKI |
| 4th Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University |
| Date | 2002/5/16 |
| Paper # | CPM2002-14 |
| Volume (vol) | vol.102 |
| Number (no) | 76 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |