Presentation 1994/5/19
Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method
Yunosuke Makita, Hajime Shibata, Akimasa Yamada,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel method was developed in which molecular beam epitaxy(MBE) can be carried out under the simultaneous irradiation of low- energy mass-separated ion beam carbon and nitrogen doping was accomplished for GaAs,AlGaAs and InGaAs with a wide range of impurity concentration.This method was proposed to be used for the fabrication of thermally non-equilibrium semiconductors such as SiGeC.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low-energy mass-separated ion beam / molecular beam epitaxy(MBE) / non-equilibrium semiconductors
Paper # CPM94-6
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Conference Information
Committee CPM
Conference Date 1994/5/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method
Sub Title (in English)
Keyword(1) low-energy mass-separated ion beam
Keyword(2) molecular beam epitaxy(MBE)
Keyword(3) non-equilibrium semiconductors
1st Author's Name Yunosuke Makita
1st Author's Affiliation Electrotechnical laboratory()
2nd Author's Name Hajime Shibata
2nd Author's Affiliation Electrotechnical laboratory
3rd Author's Name Akimasa Yamada
3rd Author's Affiliation Electrotechnical laboratory
Date 1994/5/19
Paper # CPM94-6
Volume (vol) vol.94
Number (no) 39
Page pp.pp.-
#Pages 6
Date of Issue