Presentation | 1994/5/19 Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method Yunosuke Makita, Hajime Shibata, Akimasa Yamada, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel method was developed in which molecular beam epitaxy(MBE) can be carried out under the simultaneous irradiation of low- energy mass-separated ion beam carbon and nitrogen doping was accomplished for GaAs,AlGaAs and InGaAs with a wide range of impurity concentration.This method was proposed to be used for the fabrication of thermally non-equilibrium semiconductors such as SiGeC. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | low-energy mass-separated ion beam / molecular beam epitaxy(MBE) / non-equilibrium semiconductors |
Paper # | CPM94-6 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1994/5/19(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method |
Sub Title (in English) | |
Keyword(1) | low-energy mass-separated ion beam |
Keyword(2) | molecular beam epitaxy(MBE) |
Keyword(3) | non-equilibrium semiconductors |
1st Author's Name | Yunosuke Makita |
1st Author's Affiliation | Electrotechnical laboratory() |
2nd Author's Name | Hajime Shibata |
2nd Author's Affiliation | Electrotechnical laboratory |
3rd Author's Name | Akimasa Yamada |
3rd Author's Affiliation | Electrotechnical laboratory |
Date | 1994/5/19 |
Paper # | CPM94-6 |
Volume (vol) | vol.94 |
Number (no) | 39 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |