| Presentation | 1994/5/19 Misorientation of Al-Si-Cu layers for VLSI interconnection from Al(111) plane Tomohisa Okuda, Kiyotaka Shinada, Tohru Hara, Yukihiro Kino, Takahisa Satoh, Toshihiko Hori, Shozo Ngano, Tadao Ueda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It has been strongly requested strongly(111)oriented Al-Si-Cu layer to achieve acceptable electromigration performance in the application of this layer to MOS LSI interconnection.Therefore, orientation of Al-Si-Cu layer is studied in this paper.Only a(111) peak is observed in the layer conventionally used in VLSI by conventional X-ray diffraction measurement.When the measurement is performed by newly developed glancing angle X-ray diffraction image plating technique,however,a 16゜ misoriented Laue pattern can be observed for this layer.This misorientation form the(111)plane is due to the formation of Cu rich Allayer at the first stage of the deposition.Nucleation of much smaller grained layer(grain size: nucleated layer:0.12μm,steady layer:1.1μm)leads to this misorient ation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Aluminum / Interconnection layer / Grain orientation / X-ray diffraction / Cu distribution |
| Paper # | CPM94-4 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1994/5/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Misorientation of Al-Si-Cu layers for VLSI interconnection from Al(111) plane |
| Sub Title (in English) | |
| Keyword(1) | Aluminum |
| Keyword(2) | Interconnection layer |
| Keyword(3) | Grain orientation |
| Keyword(4) | X-ray diffraction |
| Keyword(5) | Cu distribution |
| 1st Author's Name | Tomohisa Okuda |
| 1st Author's Affiliation | Department of Electrical Engineering,College of Engineering,Hosei university() |
| 2nd Author's Name | Kiyotaka Shinada |
| 2nd Author's Affiliation | Department of Electrical Engineering,College of Engineering,Hosei university |
| 3rd Author's Name | Tohru Hara |
| 3rd Author's Affiliation | Department of Electrical Engineering,College of Engineering,Hosei university |
| 4th Author's Name | Yukihiro Kino |
| 4th Author's Affiliation | Rigaku dennki X-ray laboratory |
| 5th Author's Name | Takahisa Satoh |
| 5th Author's Affiliation | Rigakudennki X-ray Laboratory |
| 6th Author's Name | Toshihiko Hori |
| 6th Author's Affiliation | Rigakudennki X-ray Laboratory |
| 7th Author's Name | Shozo Ngano |
| 7th Author's Affiliation | Mitubishi chemical Centoral research laboratory |
| 8th Author's Name | Tadao Ueda |
| 8th Author's Affiliation | Mitubishi chemical Centoral research laboratory |
| Date | 1994/5/19 |
| Paper # | CPM94-4 |
| Volume (vol) | vol.94 |
| Number (no) | 39 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |