Presentation 2001/12/13
Failure analysis technique by extracting the TEM samples from the backside of LSI chips
H. Maeda, M. Furuta, M. Hashikawa, Y. Hirose, K. Fukumoto, Y. Mashiko,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is powerful technique to inspect the backside of chips when we analyze the structure in the vicinity of the silicon substrate in advanced ULSIs. We tried extracting the Transmission Electron Microscope) TEM samples from the backside using micro-sampling technique or pick-up method to analyze abnomal points observed from the backside in more detail. In results, TEM sample preparation in specific small area in chips can be attained from the backside, which is difficult in using conventional methods.This technique gives cross sectional configurations and element maps of abnormal points in nano-meter order. Therefore we can get to investigate the causes of the failures more exactly.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Transmission Electron Microscope / backside analysis / micro-sampling / pick-up method / multi-layer interconnects
Paper # CPM-118,ICD-170
Date of Issue

Conference Information
Committee ICD
Conference Date 2001/12/13(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Failure analysis technique by extracting the TEM samples from the backside of LSI chips
Sub Title (in English)
Keyword(1) Transmission Electron Microscope
Keyword(2) backside analysis
Keyword(3) micro-sampling
Keyword(4) pick-up method
Keyword(5) multi-layer interconnects
1st Author's Name H. Maeda
1st Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation()
2nd Author's Name M. Furuta
2nd Author's Affiliation Ryouden Semiconductor System Engineering Corporation
3rd Author's Name M. Hashikawa
3rd Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
4th Author's Name Y. Hirose
4th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
5th Author's Name K. Fukumoto
5th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
6th Author's Name Y. Mashiko
6th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
Date 2001/12/13
Paper # CPM-118,ICD-170
Volume (vol) vol.101
Number (no) 518
Page pp.pp.-
#Pages 6
Date of Issue