| Presentation | 2001/12/13 Electric characteristics evaluation of LSI devices by using Scanning Probe Microscope Kazuaki KONDO, Seigen OTANI, Chikako YOSHIDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A ferro-electric random access memory or FeRAM is a non-volatile memory combining both ROM and RAM advantages. To promote making of a high density FeRAM, the defective bit evaluation technology of the device is needed. We constructed a new evaluation system, which was able to measure the electric characteristics of a single bit cell capacitor. In the system, a top electrode of a capacitor was contacted electrically by the cantilever of a scanning probe microscope (SPM). An independent manual micro-probe was set-up adjacent to the scanner of SPM to contact a bottom electrode. A pad for a bottom electrode was made with focused ion beam (FIB) equipment. The size of the contact pad was optimized to minimize the parasitic capacitance. In order to measure the electric characteristics of a cell capacitor with a small contact hole, we decreased the depth of the contact hole by filling it with tungsten using FIB. As a result, the measurement of the single bit capacitor became possible, and it has promoted failure analysis of actual devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SPM / FeRAM / failure analysis / single bit / hysteresis |
| Paper # | CPM-117,ICD-169 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2001/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electric characteristics evaluation of LSI devices by using Scanning Probe Microscope |
| Sub Title (in English) | |
| Keyword(1) | SPM |
| Keyword(2) | FeRAM |
| Keyword(3) | failure analysis |
| Keyword(4) | single bit |
| Keyword(5) | hysteresis |
| 1st Author's Name | Kazuaki KONDO |
| 1st Author's Affiliation | Silicon technology lab., Fujitsu Laboratory() |
| 2nd Author's Name | Seigen OTANI |
| 2nd Author's Affiliation | Silicon technology lab., Fujitsu Laboratory |
| 3rd Author's Name | Chikako YOSHIDA |
| 3rd Author's Affiliation | Silicon technology lab., Fujitsu Laboratory |
| Date | 2001/12/13 |
| Paper # | CPM-117,ICD-169 |
| Volume (vol) | vol.101 |
| Number (no) | 518 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |