Presentation 2001/12/13
Nanoscale Fault Isolation Technique by Conducting Atomic Force Microscopy
H. Maeda, Y. Imai, T. Koyama, K. Fukumoto, Y. Mashiko,
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Abstract(in English) We have developed a nanoscale fault isolation technique based on conductding atomic force microscopy(AFM). By this technique, we can get to locale the failure points of advanced device structures with high accuracy. Furthermore, we obtained the electrical properties by direct probing to small structures and verified the failure model. This technique is useful for advanced devices, which require high lateral resolution of fault isolation.
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Keyword(in English) conducting AFM / fault isolation technique / junction leakage failure / gate oxide leakage failure
Paper # CPM-116,ICD-168
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Conference Date 2001/12/13(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Nanoscale Fault Isolation Technique by Conducting Atomic Force Microscopy
Sub Title (in English)
Keyword(1) conducting AFM
Keyword(2) fault isolation technique
Keyword(3) junction leakage failure
Keyword(4) gate oxide leakage failure
1st Author's Name H. Maeda
1st Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation()
2nd Author's Name Y. Imai
2nd Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
3rd Author's Name T. Koyama
3rd Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
4th Author's Name K. Fukumoto
4th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
5th Author's Name Y. Mashiko
5th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corporation
Date 2001/12/13
Paper # CPM-116,ICD-168
Volume (vol) vol.101
Number (no) 518
Page pp.pp.-
#Pages 6
Date of Issue