Presentation | 2001/12/13 Nanoscale Fault Isolation Technique by Conducting Atomic Force Microscopy H. Maeda, Y. Imai, T. Koyama, K. Fukumoto, Y. Mashiko, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed a nanoscale fault isolation technique based on conductding atomic force microscopy(AFM). By this technique, we can get to locale the failure points of advanced device structures with high accuracy. Furthermore, we obtained the electrical properties by direct probing to small structures and verified the failure model. This technique is useful for advanced devices, which require high lateral resolution of fault isolation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | conducting AFM / fault isolation technique / junction leakage failure / gate oxide leakage failure |
Paper # | CPM-116,ICD-168 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2001/12/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Nanoscale Fault Isolation Technique by Conducting Atomic Force Microscopy |
Sub Title (in English) | |
Keyword(1) | conducting AFM |
Keyword(2) | fault isolation technique |
Keyword(3) | junction leakage failure |
Keyword(4) | gate oxide leakage failure |
1st Author's Name | H. Maeda |
1st Author's Affiliation | ULSI Development Center, Mitsubishi Electric Corporation() |
2nd Author's Name | Y. Imai |
2nd Author's Affiliation | ULSI Development Center, Mitsubishi Electric Corporation |
3rd Author's Name | T. Koyama |
3rd Author's Affiliation | ULSI Development Center, Mitsubishi Electric Corporation |
4th Author's Name | K. Fukumoto |
4th Author's Affiliation | ULSI Development Center, Mitsubishi Electric Corporation |
5th Author's Name | Y. Mashiko |
5th Author's Affiliation | ULSI Development Center, Mitsubishi Electric Corporation |
Date | 2001/12/13 |
Paper # | CPM-116,ICD-168 |
Volume (vol) | vol.101 |
Number (no) | 518 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |