Presentation 2001/8/17
A Bit-Line GND Sense Technique for Low-Voltage Operation FeRAM
Shoichiro Kawashima, Toru Endo, Akira Yamamoto, Ken'ichi Nakabayashi, Mitsuharu Nakazawa, Keizo Morita, Masaki Aoki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We propose a sense scheme that a pMOS charge-transfer maintains bit-line level near the GND level when the plate-line goes high. The scheme supplies 0.5 V higher read-out voltages across the cell capacitors and enables a 0.4 V higher differential amplitude in a 512-cell per bit-line structure than conventional DRAM sense scheme. A Shifted bias Plate Line layout enables 8 cells and 8 sense amplifiers activation in a cell mat that achieves 8.06 mW@3V, 5 MHz by simulation, about same as conventional device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FeRAM / PZT / 2T2C / charge-transfer-amplifier / low-voltage-operation / sense-amplifire
Paper # ICD2001-68
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Conference Date 2001/8/17(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Bit-Line GND Sense Technique for Low-Voltage Operation FeRAM
Sub Title (in English)
Keyword(1) FeRAM
Keyword(2) PZT
Keyword(3) 2T2C
Keyword(4) charge-transfer-amplifier
Keyword(5) low-voltage-operation
Keyword(6) sense-amplifire
1st Author's Name Shoichiro Kawashima
1st Author's Affiliation Fujitsu Laboratories Limited()
2nd Author's Name Toru Endo
2nd Author's Affiliation Fujitsu Laboratories Limited
3rd Author's Name Akira Yamamoto
3rd Author's Affiliation Fujitsu Laboratories Limited
4th Author's Name Ken'ichi Nakabayashi
4th Author's Affiliation Fujitsu Laboratories Limited
5th Author's Name Mitsuharu Nakazawa
5th Author's Affiliation Fujitsu Laboratories Limited
6th Author's Name Keizo Morita
6th Author's Affiliation Fujitsu Laboratories Limited
7th Author's Name Masaki Aoki
7th Author's Affiliation Fujitsu Laboratories Limited
Date 2001/8/17
Paper # ICD2001-68
Volume (vol) vol.101
Number (no) 266
Page pp.pp.-
#Pages 8
Date of Issue