| Presentation | 2000/6/30 Basic Study of Bonding Process between Different Materials C. Hong, C. Kaneshiro, S. Noge, Y. Aoki, K. Koh, T. Uno, K. Hohkawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we report results of study on the bonding process between piezoelectric substrate and semiconductor material. In order to realize rugged bonding interface between semiconductor material and piezoelectric substrate, we studied 1) surface state ( hydrophilic and roughness) of GaAs, Si, LiNbO_3 and quartz substrate for different treatment method, 2) effect of migration out of water molecules among bonding surface using radiation of microwave and laser. The experimental results clarified that these improvements in bonding process are effective to obtain stronger bonding interface between piezoelectric substrate and semiconductor material. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Epitaxial lift-off / Semiconductor / Van der Waals force / LiNbO_3 / Surface treatment. Film bonding / Wafer bonding / Piezoelectric substrate |
| Paper # | US2000-28,EMD2000-24,CPM2000-39,OME2000-34 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2000/6/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Basic Study of Bonding Process between Different Materials |
| Sub Title (in English) | |
| Keyword(1) | Epitaxial lift-off |
| Keyword(2) | Semiconductor |
| Keyword(3) | Van der Waals force |
| Keyword(4) | LiNbO_3 |
| Keyword(5) | Surface treatment. Film bonding |
| Keyword(6) | Wafer bonding |
| Keyword(7) | Piezoelectric substrate |
| 1st Author's Name | C. Hong |
| 1st Author's Affiliation | High technology research center, Kanagawa Institute of Technology() |
| 2nd Author's Name | C. Kaneshiro |
| 2nd Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| 3rd Author's Name | S. Noge |
| 3rd Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| 4th Author's Name | Y. Aoki |
| 4th Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| 5th Author's Name | K. Koh |
| 5th Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| 6th Author's Name | T. Uno |
| 6th Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| 7th Author's Name | K. Hohkawa |
| 7th Author's Affiliation | High technology research center, Kanagawa Institute of Technology |
| Date | 2000/6/30 |
| Paper # | US2000-28,EMD2000-24,CPM2000-39,OME2000-34 |
| Volume (vol) | vol.100 |
| Number (no) | 167 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |