Presentation 1999/5/21
Evaluation of Evanescent Fields on Al Thin Film/LB Thin Film Caused by Resonantly Excited Surface Plasmons
Takayuki Nakano, Hajime Kobayashi, Futao Kaneko, Kazunari Shinbo, Keizo Kato, Takahiro Kawakami, Takashi Wakamatsu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this study, evanescent fields on Al thin film or LB thin films on Al thin films caused by resonantly excited surface plasmons (SPs) were evaluated by measuring fluorescent light from a metal needle probe covered with CdS scattering the fields. The attenuated total reflection (ATR) properties were measured for the Al thin film and a dip in the ATR curve was observed at the resonant incident angle of 43.6°. The fluorescent light, that is, the evanescent fields were measured as a function of the incident angle of the laser beam exciting the SPs and as a function of the distance from the surface. The results showed that the intensity was biggest at a lower angle than the resonant angle, and that the intensity decayed exponentially with the distance. It was also observed that the intensities of the fields generating near the LB films on the Al film decreased with numbers of the LB monolayer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Surface plasmon / Evanescent field / LB film / ATR method
Paper # OME99-18
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Conference Information
Committee OME
Conference Date 1999/5/21(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of Evanescent Fields on Al Thin Film/LB Thin Film Caused by Resonantly Excited Surface Plasmons
Sub Title (in English)
Keyword(1) Surface plasmon
Keyword(2) Evanescent field
Keyword(3) LB film
Keyword(4) ATR method
1st Author's Name Takayuki Nakano
1st Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University()
2nd Author's Name Hajime Kobayashi
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University
3rd Author's Name Futao Kaneko
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University
4th Author's Name Kazunari Shinbo
4th Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University
5th Author's Name Keizo Kato
5th Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University
6th Author's Name Takahiro Kawakami
6th Author's Affiliation Department of Electrical and Electronic Engineering, Niigata University
7th Author's Name Takashi Wakamatsu
7th Author's Affiliation Department of Electrical Engineering, Ibaraki National College of Technology
Date 1999/5/21
Paper # OME99-18
Volume (vol) vol.99
Number (no) 79
Page pp.pp.-
#Pages 6
Date of Issue