Presentation | 1999/6/24 Quantitative Measurement of Local Carrier Concentration of Semiconductor from Displacement Current-Voltage Characteristics using a Scanning Vibrating Probe Yutaka MAJIMA, Yutaka OYAMA, Mitsumasa IWAMOTO, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new measuring method for evaluation carrier concentration of semiconductor is presented. The distance between a semiconductor surface and a tip is changed sinusoidally, and is set smaller than the Debye length of a semiconductor. Displacement current due to the change in electric flux from the semiconductor surface to the scanning tip flows periodically in accordance with the vibration of the tip and is measured by lock-in amplifier. The displacement current-voltage curve is analyzed by taking into account two-dimensional electric flux profile under the tip. Carrier density is evaluated by making the displacement current-voltage curve agree with the experimental results current in both the voltage regions where the majority carriers are accumulated and depleted. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | scanning probe / displacement current / semiconductor / silicon / carrier concentration |
Paper # | OME99-26 |
Date of Issue |
Conference Information | |
Committee | OME |
---|---|
Conference Date | 1999/6/24(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Organic Material Electronics (OME) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Quantitative Measurement of Local Carrier Concentration of Semiconductor from Displacement Current-Voltage Characteristics using a Scanning Vibrating Probe |
Sub Title (in English) | |
Keyword(1) | scanning probe |
Keyword(2) | displacement current |
Keyword(3) | semiconductor |
Keyword(4) | silicon |
Keyword(5) | carrier concentration |
1st Author's Name | Yutaka MAJIMA |
1st Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology() |
2nd Author's Name | Yutaka OYAMA |
2nd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
3rd Author's Name | Mitsumasa IWAMOTO |
3rd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
Date | 1999/6/24 |
Paper # | OME99-26 |
Volume (vol) | vol.99 |
Number (no) | 137 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |